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BLF578
Power LDMOS transistor
Rev. 01 -- 11 December 2008 Objective data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 D (%) 70
Mode of operation
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I Industrial, scientific and medical applications I Broadcast transmitter applications
NXP Semiconductors
BLF578
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source
[1]
Simplified outline
1 2 5
Graphic symbol
1
3 3 4 4 5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF578 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 110 +11 112 +150 225 Unit V V A C C
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Objective data sheet
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NXP Semiconductors
BLF578
Power LDMOS transistor
5. Thermal characteristics
Table 5. Rth(j-c)
[1]
Thermal characteristics Conditions
[1]
Symbol Parameter
Typ 0.03
Unit K/W
thermal resistance from junction to case Tcase = 80 C; PL = 1200 W; tp = 100 s; = 20 %
Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current drain-source on-state resistance feedback capacitance input capacitance output capacitance Conditions VGS = 0 V; ID = 2.5 mA VDS = 10 V; ID = 500 mA VDS = 50 V; ID = 20 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VGS = VGS(th) + 3.75 V; ID = 16.66 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz Min 110 1.25 58 Typ 1.7 75 0.07 3 403 138 Max 2.25 2.8 280 Unit V V A A nA pF pF pF
V
Table 7. RF characteristics Mode of operation: pulsed RF; tp = 100 s; = 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp RLin D power gain input return loss drain efficiency Conditions PL = 1200 W PL = 1200 W PL = 1200 W Min Typ Max Unit dB % 24 25 70 dB
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Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
900 Coss (pF) 750
001aaj113
600
450
300
150
0 0 10 20 30 40 50 VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per section
6.1 Ruggedness in class-AB operation
The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 225 MHz.
BLF578_1
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Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
7. Application information
7.1 Reliability
105 Years
(1) (2) (3) (4) (5) (6)
001aaj114
104
103
102
(7) (8) (9) (10) (11)
10
1 0 4 8 12 16 Idc (A) 20
TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) x 1/ . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 2.
BLF578 electromigration (ID, total device)
BLF578_1
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Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
8. Test information
8.1 Impedance information
Table 8. Typical impedance Simulated ZS and ZL test circuit impedances. f MHz 225 ZS 3.2 + j2.6 ZL 3.7 - j0.2
drain ZL gate ZS
001aaf059
Fig 3.
Definition of transistor impedance
BLF578_1
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Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW pulsed
001aaj119 001aaj120
26 Gp (dB) 24 D 22
80 D (%)
28 Gp (dB) 26
(5) (4)
Gp 60
40
24
(3) (2) (1)
20
20
22
18 100
300
500
700
900
1100
0 1300 1500 PL (W)
20 100
300
500
700
900
1100
1300 1500 PL (W)
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %.
VDS = 50 V; f = 225 MHz; tp = 100 s; = 20 %. (1) IDq = 0 mA (2) IDq = 20 mA (3) IDq = 40 mA (4) IDq = 80 mA (5) IDq = 150 mA
Fig 4.
Power gain and drain efficiency as functions of load power; typical values
Fig 5.
Pulsed power gain as function of load power; typical values
BLF578_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
26 Gp (dB) 24
001aaj121
66 PL (dBm) 64 ideal PL
001aaj122
(2)
22
(2) (1)
(3)
62
(1)
PL 60
20
18 100
58 300 500 700 900 1100 1300 1500 PL (W) 34 36 38 Ps (dBm) 40
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %. (1) VDS = 40 V (2) VDS = 45 V (3) VDS = 50 V
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %. (1) PL(1dB) = 61.1 dBm (1300 W) (2) PL(3dB) = 61.5 dBm (1425 W)
Fig 6.
Pulsed power gain as function of load power; typical values
Fig 7.
Load Power as function of source power; typical values
8.3 Test circuit
Table 9. List of components For production test circuit, see Figure 8 and Figure 9. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component C1, C2, C11, C12 C2, C3, C27, C28 C5, C7, C8, C21, C22 C6 C9, C10, C13, C15 C14 C16, C17 C18 C19 C20 C23 C24 C25, C26 L1, L2 L3, L12 L4, L5, L10, L11
BLF578_1
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor 3 turns 1 mm copper wire stripline stripline
Value 4.7 F 100 nF 1 nF 30 pF 62 pF 36 pF 24 pF 30 pF 27 pF 9.1 pF 13 pF 16 pF 220 F; 63 V D = 2 mm; length = 3 mm [1] [1] [1] [1] [1] [1] [1] [1] [1] [1]
Remarks TDK4532X7R1E475Mt020U Murata X7R 250 V
(L x W) 15 mm x 2.4 mm (L x W) 47 mm x 10 mm
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
8 of 14
NXP Semiconductors
BLF578
Power LDMOS transistor
Table 9. List of components ...continued For production test circuit, see Figure 8 and Figure 9. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component L6, L7, L8, L9 R1, R2 R3, R4 R5, R6 T1, T2
[1]
Description stripline metal film resistor metal film resistor metal film resistor semi rigid coax
Value 2 ; 0.6 W 20 ; 0.6 W 1 ; 0.6 W 50 ; 58 mm
Remarks (L x W) 8 mm x 15 mm
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
VGG
C1
VDD
C25
C11 C2 R3 T2 C13 C7 C5 L3 C21 L12 C24 R5 C28 L1
R1
input 50
C9
L4
L6
L8 C14
L10
C17 C19
output 50
C6
C8 T1
C10
L5
L7
L9 C15
L11
C16 C18 C20
C22
C23 R6 L2 C27
R2 C3
R4
C12
C4
C26
VGG
VDD
001aaj123
See Table 9 for a list of components.
Fig 8.
Class-AB common-source production test circuit
BLF578_1
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Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
C25 C11 C1 C2 R1 C7 C5 C6 C8 R2 C3 C4 C9 C10 R4 C15 C16 C18 C20 C22 R6 L2 C27 C26 R3 C13 C14 C17 C19 C23 C24 T2 C28 L1 R5
C21
T1
C12
001aaj124
See Table 9 for a list of components.
Fig 9.
Component layout for class-AB production test circuit
BLF578_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
10 of 14
NXP Semiconductors
BLF578
Power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A
D
A F D1
U1 q H1 C
B
w2 M C M
c
1
2
H U2
p
E1 w1 M A M B M
E
5
L A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25
9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96
1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72
41.28 10.29 0.25 41.02 10.03
0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395
OUTLINE VERSION SOT539A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 00-03-03
Fig 10. Package outline SOT539A
BLF578_1 (c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
10. Abbreviations
Table 10. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Time To Failure Voltage Standing-Wave Ratio
11. Revision history
Table 11. BLF578_1 Revision history Release date 20081211 Data sheet status Objective data sheet Change notice Supersedes Document ID
BLF578_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
12 of 14
NXP Semiconductors
BLF578
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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Objective data sheet
Rev. 01 -- 11 December 2008
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NXP Semiconductors
BLF578
Power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 8 8.1 8.2 8.2.1 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Impedance information . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BLF578_1

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